Samsung yakaburitsa hurongwa hwayo mubhizinesi resemiconductor pamusangano wakaitirwa muUnited States. Akaratidza mugwagwa unoratidza shanduko zvishoma nezvishoma kuenda ku7nm LPP (Low Power Plus), 5nm LPE (Low Power Early), 4nm LPE/LPP uye 3nm Gate-All-Around Early/Plus tekinoroji.
Hofori yeSouth Korea ichatanga kugadzirwa kwe7nm LPP tekinoroji, iyo ichashandisa EUV lithography, muhafu yechipiri yegore rinouya, panguva imwechete inokwikwidza TSMC ichida kutanga kugadzira neyakagadziridzwa 7nm+ maitiro uye kutanga kugadzirwa zvine njodzi ne5nm maitiro. .
Samsung ichatanga kugadzira chipsets ne 5nm LPE process pakupera kwe2019 uye 4nm LPE / LPP process panguva ye2020. Ndiyo 4nm tekinoroji ichava yekupedzisira tekinoroji ichashandisa FinFET transistors. Zvose 5nm uye 4nm maitiro anotarisirwa kuderedza saizi yechipset, asi panguva imwechete kuwedzera kushanda uye kuderedza kushandiswa.
Kutanga ne 3nm tekinoroji, kambani ichachinja kune yayo MBCFET (Multi Bridge Channel FET) GAA (Gate All Around) architecture. Kana zvese zvikafamba zvinoenderana nehurongwa, chipsets dzinofanirwa kugadzirwa muna 3 uchishandisa iyo 2022nm maitiro.
